Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct . GaAs diodes can be used for the detection of X-rays. Type I heterojunctions are quite common, the important GaAs – AlGaAs system is sometimes called an isotype junction, the pn-type a diode type junctions. The double-Schottky-diode model of Oldham and Milnes. The l-V characteristics of the GaAs-Ge isotype heterojunctions investigated by Anderson .

Author: Kazrakazahn Malasho
Country: Laos
Language: English (Spanish)
Genre: Career
Published (Last): 22 February 2012
Pages: 318
PDF File Size: 7.14 Mb
ePub File Size: 6.68 Mb
ISBN: 731-2-67206-672-1
Downloads: 74710
Price: Free* [*Free Regsitration Required]
Uploader: Fecage

Nobody knows how to do that in some kind of comprehensive theory.

Gallium arsenide

The electronic properties of these defects interacting with others cause the Fermi level to be pinned to near the center of the bandgap, so that this GaAs crystal has very low concentration of electrons and holes.

National Institutes of Health. Exactly the same thing as for differently doped Si:. This page was last edited on 27 Novemberat Concerns over GaAs’s susceptibility to heat damage have been raised, but it has been speculated that certain manufacturers would benefit from such limitations, considering the planned obsolescence cycle that many consumer electronics are designed to follow.

The GaAs solar cells, manufactured by Kvant, were chosen because of their higher performance in high temperature environments. After all, the equations for I-V -characteristics across a junction without the space charge layer part in the simple or more complex form did not contain anything about the shape of the band bending – only the potential difference and bulk properties of materials to the left and right of the junction.

Then we bend the bands – in a smaller region on the more heavily doped side – but always identical for the band edges! Or, if there is some radiative recombination, the quantum- or current efficiencies?

In the s, GaAs solar cells took over from silicon as the cell type most commonly used for photovoltaic arrays for satellite applications. Whatever its value, it is determined by the interaction of the atoms at the interface and interatomic forces are responsible for its value. Inthe GaAs heterostructure solar cells were developed by the team led by Zhores Alferov in the USSR[17] [18] [19] achieving much higher efficiencies.


We don’t know exactly what it looks like, but we can now take this potential and plug it into a one-dimensional Poisson equations and see what it means for the charge distribution. Silicon has three major advantages over GaAs for integrated circuit manufacture.

To the left and the right of the junction the bands are bend accordingly, and so is the vacuum energy.

The discontinuities of the bands are such that both types of carriers, electrons and holes, need energy D E C and D E Vresp. The Chemistry of the Semiconductor Industry. GaAs has been used to produce near-infrared laser diodes since This is a very important equation for optoelectronics. Rewriting this equation in terms of the carrier mobilities, and the doping concentration assuming fully ionized dopants with the relations given beforewe obtain.

For homojunctionsthe number of electrons flowing into the p -type part is then the same as the number of electrons flowing into the n -part. Gallium arsenide single crystals can be prepared by three industrial processes: For the intrinsic carrier concentrations of any semiconductor we have the basic equations:. Unavoidably, there must be a dipole layer right at the interface look at this basic module if you have problems figuring that out.

After all, the vacuum potential at some position x is fixed and so are the band edges relative to the vacuum potential. Semiconductor laser theory Laser diode rate equations. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including indium gallium arsenidealuminum gallium arsenide and others.

You isogype not have injection doide two pn -junctions – one junction must be an isotype junction. In addition, a Si crystal has a very stable structure and can be grown to very large diameter boules and processed with very good yields. Because they lack a fast CMOS structure, GaAs circuits must use logic styles which have much higher power consumption; this has dioce GaAs logic circuits unable to compete with silicon logic circuits. This tells us, that the basic diode characteristics assuming that nothing happens in the space charge region must still be valid in its general form, but with one big difference that transfers into a decisive property of heterojunctions:.


This low carrier concentration is similar to an intrinsic perfectly undoped crystal, but much easier to achieve in practice.

This has made it an ideal material for monolithic microwave integrated circuits, MMICswhere active and essential passive components can readily be produced on a single slice of GaAs.

Isotype junctions must also have band discontinuities at the interface, the next picture shows examples. This type of heterojunction is sometimes called an gaaas junctionthe pn -type a diode type junctions.

For manufacturing solar cells, silicon has relatively low absorptivity for sunlight, meaning about micrometers of Si is needed to absorb most sunlight.

But there are many other advantages so compelling that extremely complicated heterostructures are now routinely produced despite a lot of problems that are encountered, too. There are many heterojunctions and we will not be able to delve very deep into the subject.

Ideal Heterojunctions

First, we align the Fermi energies. Because if we sandwich a small gap semiconductor between two large gap semiconductors, we should be able to inject a lot of electrons from one side and a lot of holes from the other side- with no means of escape. We can not join the two materials! Far away from the junction, everything is unchanged.

The situation for carrier transfer is like type IIjust more pronounced. Some electronic properties of gallium arsenide are superior to those of silicon. This is isotjpe result of higher carrier mobilities and lower resistive device parasitics. Extended cavity diode laser Volume Bragg grating laser.